Abstract
Si(100) wafer was abrasively processed (ground or lapped), and the crystallographic and electroconductive properties of the surface were investigated. Large surface crystallites formed by grinding gave a large contact resistance between the surface and the deposited Ti film. Surfaces which had been made polycrystalline by grinding or lapping showed small resistances. The processing can be used for a high-yield production of thin power metal-oxide semiconductor field effect transistors.
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