Abstract
In this work a characterization of silicon carbide films (a- SiC:H) to be used as masking material in wet etching of silicon and glass for MEMS applications is presented. Silicon carbide was deposited by PECVD from silane and methane mixture diluted with hydrogen, at low RF frequency. Film chemical bondings were characterized by IR spectrophotometry and UV/visible transmitance, the surface quality of films was estimated by AFM. A correlation among the Si-C bonding concentration, grain density on film surface, and the films etching resistant was observed. In order to pattern the silicon carbide, samples were dry etched in a RIE/ICP system with CF4 gas, and etch rates as high as 1000 Aå/min were achieved. Silicon carbide films with low rate of silane in the mixture proved to be more resistant to wet solutions of KOH and HF:Cl for etching of silicon and glass, respectively.
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