Abstract
An Al 0.2Ga 0.8As thick film (∼3 μm) on a GaAs (1 1 1) substrate, grown by liquid phase epitaxy (LPE), has been analyzed by Rutherford Backscattering Spectrometry (RBS) and channeling experiments with He + ions. The channeling minimum yield, χ min, value of 5% indicates a good quality of the LPE-grown film. An RBS measurement with 1.62 MeV H + ions was carried out to locate the substrate–epilayer interface and to measure the thickness of the epilayer. A comparison on the measurements with He + and H + beams for characterizing a thick epitaxial layer is presented and discussed. Since the Al signal was not directly identifiable in the RBS spectra, proton induced γ-ray emission (PIGE) measurements were also taken up as a direct method to determine the Al content in the epilayer.
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