Abstract
For the first time, a large area Silicon Carbide (SiC) PiN diode was measured to determine the forward and reverse characteristics at temperatures up to 900°C. The diode characterized had a chip area of 64 mm2 and used a conventional SiC PiN structure with a 75 um N type blocking layer thickness. A normal rating for this device at room temperature would be 50 amps at 100 A/cm2 and 6 kV. Since a package capable of operating at 900°C was not available, methods were developed to heat and verify the temperature of the diode die, provide electrical connections to the die and provide adequate insulation to minimize temperature gradients across the die. Even at this extreme temperature the diode maintained typical diode characteristics and maintained surprisingly good performance.
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