Abstract
AbstractX‐ray reflection spectroscopy (XRS) and X‐ray emission spectroscopy (XES) were used to characterize a HfO2/SiO2/Si system. XRS performed at different glancing angles around the O K absorption edge and analysed with Kramers–Kronig transform (KKT) enabled the depth profilometry of the sample and provided information on the local physico‐chemical environment of the oxygen atoms. The physico‐chemical state of silicon atoms present in the HfO2/SiO2/Si system was studied by XES induced by electrons. From the analysis of the Si 3p occupied valence states, the very thin oxide interfacial layer was characterized. From the simulation of the spectra and the calculation of the emissive thicknesses, the silicon oxide thickness was determined to be one or two monolayers. Copyright © 2006 John Wiley & Sons, Ltd.
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