Abstract
Characterization of Al2O3 gate dielectric on GaN using pulsed laser Atom Probe Tomography is reported. Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A significant amount of carbon impurities (1019/cm3) were detected in the dielectric film that matches well with the estimated bulk trap density from C–V measurements. Our experiments suggest possible correlation between trap-related electrical hysteresis and the observed impurity concentration in these films.
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