Abstract
We have characterized a diamond p-n junction by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL). The diamond p-n junction was fabricated by growing a B-doped p-type layer and a P-doped n-type layer on the {111} diamond substrate by microwave plasma enhanced chemical vapor deposition. The cross section of p-n junction was revealed by the mesa etching. The substrate, B- and P-doped layers were distinguished by CL spectra. The EBIC profiles across the p-n junction were recorded under various reverse bias conditions. These data confirmed that the p-n junction was actually formed at the interface between B- and P-doped layers. The energy-band profile suggests that the carrier concentration of P-doped layer is more than ten times higher than that of B-doped layer. The observed results strongly support the fact that the UV luminescence is emitted from the p-n junction region in diamond light-emitting diode.
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