Characterization of a Co–Se thin film by scanning Auger microscopy and Raman spectroscopy

Abstract

Scanning Auger microscopy and micro-Raman spectroscopy are combined to characterize a Co–Se thin film sample, containing 84 at.% Se, which had been modified in localized areas following excitation with an intense focused Ar + laser (514.5 nm). The information obtained helps to establish that a previous assignment for a Co–Se sample of Raman features between 168 and 175 cm −1 actually refers to an oxygenated Co–Se species, and that Co–Se interactions in a Se-rich environment give rise to Raman structure between 181 and 184 cm −1. Comparisons are made for the use of Ar + and HeNe laser sources for Raman measurements in this context; the latter in general gives both better resolution and better signal-to-noise characteristics.