Abstract
Cu2SnS3 (CTS) absorber layer was deposited onto a Mo-coated soda-lime glass substrate by sulfurizing a co-evaporated Cu–SnS precursor thin film. Phase composition and quality of the layer were examined by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. A solar cell with such CTS absorber layer was characterized by current-voltage, external quantum efficiency, capacitance-voltage, and admittance spectroscopy. The CTS solar cell exhibited a maximum conversion efficiency of 2.01%. Capacitance-voltage measurement showed that CTS absorber had hole carrier concentration of 6.37 × 1016 cm−3 and depletion width of 82 nm at room temperature. Admittance spectroscopy showed capacitance steps that might have originated from a deep-level with activation energy and pre-exponential factor of about 0.11 eV and 8.31 × 104 s−1∙K−2, respectively. The concentration of the deep-level defects was estimated to be 5.23 × 1018 cm−3.
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