Characterization of 3C-SiC doped by nitrogen implantation

Abstract

Doping by ion implantation, in addition to the introduction of dopants during material growth, is the only method available to obtain the required electronic activation in SiC and is also capable of providing area selective doping. Results presented here were obtained from implantations of nitrogen in the energy range from 50 to 180 keV. Implantations were performed as single energy implants in order to allow a comparison of the implanted profiles with theory. Theoretical profiles are calculated by Monte Carlo simulation using the TRIM code. Profiles from the simulation and secondary ion mass spectroscopy measurements were fitted using Pearson distributions. From this procedure the parameters projected range, straggle, kurtosis and skewness were extracted. The projected ranges obtained vary almost linearly with implantation energy from 83 nm (50 keV) to 261 nm (180 keV). The activation of the implanted impurities was measured by the Hall method. The influence of different implantation parameters on activation is discussed.