Abstract
The back-reflection diffraction of a divergent x-ray beam has been studied for the characterization of (111) GaAs and (111) InP substrates and homoepitaxial layers with different states of surface perfection. Diffraction conditions for generating back-reflection pseudo-Kossel patterns from (111) GaAs and (111) InP are presented. Mechanical polishing was observed to produce x-ray diffraction line broadening. Uneven line broadening was found to be produced by an inhomogeneous distribution of dislocations. The diffraction angles for pseudo-Kossel lines were influenced by subgrain tilting in epitaxial, LPE-grown layers. A close relationship between diffraction line profiles and surface morphology of the epitaxial layer was demonstrated with interference-contrast optical microscopy.
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