Abstract
The charge behavior of dielectric films on silicon is particularly important in device and integrated circuit technology because of surface effects. Models for ionic migration, fixed-interface charge, and injection trapping are reviewed for insulators used in silicon technology: thermally-grown silicon dioxide and chemical vapor-deposited silicon dioxide and silicon nitride. The distinctive characteristics of insulator charge related to these mechanisms are applied in the case of reactively sputtered SiO2 and Ta2O5. Ion migration and injection-trapping behavior are found under certain conditions of preparation for both materials. A degree of interface charge control is indicated in the study of sputtered silicon dioxide. More work is needed to establish the future utility of these materials.
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