Abstract
Internal photoemission spectroscopy measurements have been performed to study the electrical characteristics of Schottky diodes on boron-doped singlecrystalline chemical vapor deposited (SC-CVD) diamond. These measurements were compared with current–voltage (I–V) and current–temperature (I–T) measurements. Schottky contact barrier heights and ideality factors have been measured on Schottky contacts formed on four samples with Au, Ni, and Al contact metallizations. I–V and I–T measurements were performed in the temperature range from 300 K to 500 K. The internal photoemission method, which is less influenced by local variations in the Schottky barrier height than the other two methods, yielded the highest values of Schottky barrier heights to p-type material: UB = 1.78 eV to 2.10 eV, depending on the choice of contact metal and sample boron concentration.
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