Abstract
A large, crack-free ZnGeP2 single crystal with size of Φ26 mm×70 mm was grown in a vertical three-zone tubular furnace by modified vertical Bridgman method, i.e. real-time temperature compensation technique with small temperature gradient in double-wall quartz ampoule. The as-grown single crystal was characterized by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). It was found that there is a face of (100) and its second-order XRD peaks were observed. The vertical elements distribution of the main part of the grown crystal has a stoichiometric ratio which is close to the ideal stoichiometry of 1:1:2. The IR transmittance of a sample of 2.5 mm thickness is above 58% in the range from 3500 to 800 cm-1. All these results demonstrate that the quality of the ZnGeP2 single crystal grown by the modified method is good, and could be used in the preparation of devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
