Abstract
The effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4HSiC epilayers was investigated. 1200V JBS diodes from Cree were irradiated in nuclear reactor by fast neutrons with fluences ranging from 1.3x1013 to 4x1014 cm-2 (1MeV NIEL equivalent in Si). Evolution of radiation damage was studied by deep level transient spectroscopy. New characterization method based on dynamic measurement of current to voltage characteristics in the kV range then allowed precise analysis of blocking characteristics and observation of free charge carrier removal with increasing neutron fluence. Results show that irradiation with fast neutrons introduces different point defect giving rise to acceptor like deep levels in SiC bandgap. These levels have a negligible effect on dynamic and blocking characteristics of irradiated JBS diodes, however, acceptor character of introduced deep levels accompanied by deactivation of donor dopants deteriorates diodes ON-state resistance already at low irradiation fluences. This degradation is then manifested by increasing values of the series resistance and the emission coefficient in the SPICE model of the JBS diode.
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