Abstract
Residual defects in 5 keV, 5 × 10 15/cm 2 BF 2 + implanted (001)Si samples have been investigated by transmission electron microscopy. The residual defects were identified to be {113} interstitial defects, (001) defect clusters, fluorine bubbles and stacking faults. For the removal of the end-of-range (EOR) defects, the activation energy was determined to be 4.5 ± 0.4 eV. It is suggested that the free surface and fluorine bubbles act as effective vacancy sources to accelerate the removal of EOR defects.
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