Abstract
Substrate transfer has been proposed as a postprocessing technology to transfer circuits with standard IC processing to an alternative substrate e.g. plastic. We demonstrate the intrinsic performances of nMOSFETs with 30 μm Si on plastic are a little degradation but the process can be controlled well. High flexibility of 30 μm Si on plastic enhances device characteristics under tensile strain on 15 mm radius bending vehicle. Good fatigue properties and comparable electrical reliability are also obtained.
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