Characterization and Recovery of Deep Sub Micron (DSM) Technologies Behavior Under Radiation

Abstract

This paper serves as a twofold purpose: characterize the behavior of a reconfigurable chip exposed to radiation; and demonstrate a method for functionality recovery due to total ionizing dose (TID) effects. The experiments are performed using a JPL-developed reconfigurable device, a field programmable transistor array (FPTA). The paper initially describes experiments on the characterization of the NMOS transistor behavior for TID values up to 300krad. The behavior of analog and digital circuits downloaded onto the FPTA chip is also assessed for TID effects. This paper also presents a novel approach for circuit functionality recovery due to radiation effects based on evolvable hardware. The key idea is to reconfigure a programmable device, in-situ, to compensate, or bypass its degraded or damaged components. Experiments with total radiation dose up to 300kRad show that while the functionality of a variety of circuits is degraded/lost at levels before 200kRad, the correct functionality can be recovered through the proposed evolutionary approach, and the chips are able to survive higher radiation, for several functions in excess of total radiation dose of 250kRad