Abstract
Preparation of high quality SiO2 and SiOF films has been attempted from tetraethoxysilane (TEOS)/O2 and TEOS/O2/CF4 precursors by modifying deposition variables. The deposited films were fully characterized by various analytical tools, such as FT-IR, UV-VIS-NIR spectrophotometry, XPS, ex situ ellipsometry and SEM. From the characterization of SiO2 films, it was demonstrated that the TEOS/O2 flow ratio is a critical parameter that controls the film quality and, when the TEOS/O2 flow ratio is low enough to prevent the physical adsorption of TEOS on the film surface during growth, good quality SiO2 films can be deposited at a high growth rate, even at low temperatures of 100°C. It is also noted that the addition of CF4 ranging from 0 to 70 sccm to the TEOS/O2 mixture can induce a lowering of the refractive index by replacing the highly polarizable Si–OH and OH bonds with less polarizable Si–F bonds and result in the formation of an SiOF film having good optical and structural characteristics without disadvantages such as a porous structure and hygroscopicity.
Published Version
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