Characterization and performance of MOCVD grown 0.14-μm InP-HEMTs for low voltage applications

Abstract

The layer structures of high electron mobility transistors (HEMTs) have been characterized by photoluminescence (PL), X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) techniques. For the low voltage applications in mind, single and double delta-doped lattice matched HEMT devices have been processed and dc and RF performance is reported. At a drain-source bias of 1.25 V, a single delta doped 0.14-μm HEMT device shows an f T of 118 GHz and f max of 265 GHz. Similarly, a double delta doped 0.14 μm HEMT gives an f T of 135 GHz and f max of 140 GHz. The extracted physical parameters of HEMTs from PL and XRD techniques show excellent correlation with that of the grown devices.