Abstract
The piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in reactive plasma have been researched. ZnO films have been grown on SiO/sub 2//Si (100) substrate using a zinc oxide target. Different RF power and reactive plasma have been tested to obtain a good piezoelectric material for SAW applications. Crystalline structures and morphological characteristics of the films were investigated by x-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. Al/ZnO/SiO/sub 2/-Si configuration SAW devices were fabricated and characterized by frequency response measurements.
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