Abstract

In the world of MEMS processing today, fabrications of membrane are performed using bulk micromachining (BMM). However these techniques not easiest to integrate with CMOS standard process due to not compatible of the processing flow. An attractive alternative deployment of surface micromachining (SMM). There is a trend to use surface micromachining to their advantage of simplicity in design and fabrication process compatibility. This paper presents process development of thin layer membrane for very low capacitive pressure sensor application. The structure of the membrane consists of parallel plate which both top and bottom electrodes were fixed at both sides. Utilizing CMOS MEMS process compatible fabrication of the thin layer membrane involved in three stages; i) hole opening etch, ii) sacrificial intermediate oxide release etch and iii) closing of etch holes. Therefore seals-off process characterization and optimization experiment are presented in this paper, will spur advancement in the development of a CMOS MEMS product for very low capacitive pressure sensor.

Highlights

  • This work presents an invention of CMOS-based MEMS very low pressure sensor for measuring intraocular pressure inside the eye

  • The need to measure the intraocular pressure is for screening the risk of glaucoma that causes damage to the optic nerve which can gradually leading to vision loss

  • A very low pressure sensor has been proposed to be used in the eye for glaucoma treatment in the course of pressure ranging from 10 mmHg to 75 mmHg [1]

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Summary

Introduction

This work presents an invention of CMOS-based MEMS very low pressure sensor for measuring intraocular pressure inside the eye. The resulting intraocular pressure profile consists of 24 to 48 data points a day and is obtained under artificial condition of hospitalization. The principal goal of the project was to develop thin layer membrane for very low pressure sensor application. Specific goals to used fabrication technology of CMOS compatible material and were processed in the same as tool as CMOS lot facility [2, 3, 4].

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