Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application

Abstract

Abstract In this study, the structure of efficient recessed gate Metal Insulator Semiconductor High Electron Mobility Transistor with Quaternary Barrier materials of Al0.42ln0.03Ga0.55N was simulated and presented. The device with heterostructure of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN and thickness of 5 nm/10 nm/40 nm/10 μm on SiC substrate shows normally-OFF characteristics. The effect of high~k dielectrics of HfAlxOx and the quaternary barrier on the electrical performance of the device was analyzed and compared with the conventional AlGaN/GaN heterostructure. We found that the charge optimization concept of the polarization induced charges of the device 2DEG in the channel was due to the combination of the Quaternary Barrier of Al0.42ln0.03Ga0.55N and the high~k dielectrics of HfAlxOx. Furthermore, the two field plates used which are having a length of plate at the drain (LGFP) of 1.8 μm and field plate at the source (LGPS) 0.5 μm effectively spread the electric field lines with the drain and showed a significant improvement in the electrical properties of the device and achieved a maximum drain current of 710 mA/mmV, low transconductance (gm) of 0.158 Smm−1 and high breakdown voltage of 570 V. In comparison to the conventional AlGaN/GaN MIS-HEMTs of similar design, the result of this Quaternary Barrier Metal Insulator Semiconductor High Electron Mobility Transistor (QB-MIS-HEMTs) exhibited a better interface property, remarkable suppression of leakage current, and excellent breakdown voltage which are important for power switching applications.