Abstract
Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be avoided, but it is hard to realize the minimization of total power loss. Thus, we analyze the influence of gate driver turn-off voltage on eGaN HEMT reverse conduction loss, switching loss and crosstalk voltage, and propose an optimized design rules for determining turn-off voltage value in a phase-leg configuration. By reasonably choosing gate driver turn-off voltage, a balance between optimal loss and reliable operation is achieved, thereby effectively alleviating the conflict between efficiency and reliability in the power electronic system.
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