Abstract
Vertically aligned ZnO nanowire arrays were synthesized by two-step hydrothermal method. ZnO seed layers were prepared on substrate by using anhydrous ethanol and zinc acetate dihydrate solution, followed by the generation of ZnO nanowire arrays by low-temperature liquid-phase hydrothermal methods. The ZnO nanowire arrays were prepared under different conditions to compare the effects of growth conditions on the morphology of ZnO nanowires, in order to explore the optimal growth conditions for ZnO nanowire arrays used in semiconductor device. The morphological changes of ZnO nanowire arrays grown under different conditions were systematically analyzed by SEM, XRD and other characterization means. The results show that the seed solution concentration, growth solution concentration, doping concentration and growth time all have certain effects on the morphology of ZnO nanowire arrays. Besides, the Ag/ZnO ohmic contact were investigated, the optimal annealing temperatures of 450 °C was obtained.
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