Characterization and nuclear shielding performance of Sm doped In₂O₃ thin films

Abstract

The widespread use of nuclear technology has increased interest in the concept of radiation shielding. Therefore, thin films are one of the applications of interest in both science and industry used in various applications such as laboratory equipment, optoelectronic materials, and radiation shielding materials. The present work synthesized pure indium oxide (In2O3) and samarium (Sm) doped In2O3 thin films by the spray pyrolysis method. The obtained samples were characterized by X-ray diffractometer, scanning electron microscopy (SEM), and Uv–vis spectrometer. The cubic crystalline form of synthesized In2O3 thin film was observed from the X-ray pattern. By introducing the Sm element, the crystalline peaks of In2O3 gradually decreased with increasing doping concentration. The experimental linear attenuation coefficients (μ) of different percentages (0, 5, 10, and 20%) Sm doped In2O3 thin films have been determined using 6 MeV energized X-ray via VARIAN® and PTW® ion chamber. Accordingly, some terms important in shielding were calculated using μ. The obtained results from these measurements can help understand the radiation shielding performance of In2O3: Sm thin films.