Abstract
Cryogenic resistance thermometers composed of Ge films on GaAs substrates have been produced and characterized They are able to measure temperature over a wide range, from 0.03 K to 400 K. Behavior of these thermometers in magnetic fields and under gamma irradiation has been studied. The low-temperature conduction and magnetoresistance mechanisms of Ge-films used as a sensitive material for thermometers have been analyzed.
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