Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Prakash Pandey,Daniel G Georgiev,James C Gallagher,Andrew D Koehler,Sadab Mahmud,Mona A Ebrish,Geoffrey M Foster,Travis J Anderson,Raghav Khanna,William Collings,Karl D Hobart,Michael R Hontz,Tolen Nelson,Alan Jacobs

doi:10.1109/apec43599.2022.9773766

Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Prakash Pandey, Daniel G Georgiev + Show 12 more

https://doi.org/10.1109/apec43599.2022.9773766

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Publication Date: Mar 20, 2022

Citations: 1

Affiliation: University of Toledo, United States Naval Research Laboratory, Naval Surface Warfare Center

#Vertical GaN Diodes #Vertical Diode + Show 8 more

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Abstract

A simplified edge termination technique for vertical GaN diodes is proposed based on different studies through Sentaurus TCAD (Synopsys) simulations. The proposed model is verified experimentally by fabricating the 1.3 kV GaN vertical diode. The switching characteristics of this vertical GaN diode are investigated by simulating a model of the diode in a Double-Pulse Test (DPT) Circuit using SaberRD. The simulation results are compared to the switching characteristics of a comparable commercially available Si diode. Comparison of reverse recovery characteristics demonstrates that the vertical GaN diode has lower turn-off loss.

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