Characterization and kinetics of Al xGa 1− xAs by organometallic-CVD

Abstract

Al xGa 1− x As is an important III–V semiconductor for device applications in the optoelectronics field. Growth aspects, characterization and kinetics of Al xGa 1− x As by organometallic - CVD are reviewed. The review primarily covers the effect of growth parameters on material preparation and material quality, doping, electronic and optical properties, and applications to devices and associated problems with their performance. Current problems of PPC centers, D.X centers, and deep level characterization in relation to the basic chemistry of the material and implications on device performance are dealt with. Growth and characterizations of exotic multilayer structures (superlattices, cascades, multiple quantum well structures, etc.) are reported in terms of current specific problems. The future of crystal growth methods employing the organometallics is assessed in relation to the current and future technologies.