Abstract
Summary form only given. The authors optimized the device structure to suppress the short channel effect due to the residual stress in GaAs/Si substrates and improved the microscopic uniformity. The residual-stress problem was solved by introducing a p-layer (C/sup +/: 140 keV) buried under the n-type channel (Si/sup +/: 20 keV) in the n/sup +/ self-alignment technique with refractory W-Al gate. The authors then evaluated the microscopic uniformity of the device on GaAs/Si using 60- mu m*60- mu m-pitch FET arrays, and found that it is improved by introducing the p-layer. To evaluate the dynamic characteristics, a direct-coupled FET logic (DCFL) ring oscillator was fabricated using a 0.3- mu m-gate MESFET on the GaAs/Si substrate. The propagation delay was as small as 19.9 ps/gate at a supply voltage of 2 V. >
Published Version
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