Abstract
Alpha germanium nitride (α-Ge 3N 4) nanowires were prepared through an oxide-assisted method. It was found that the produced nanowires are long, uniform and smooth with diameters of 20–200 nm and lengths of several tens of micrometers. The α-Ge 3N 4 nanowires were characterized in detail. The observations reveal that the α-Ge 3N 4 nanowires are crystalline and free of defects. The growth mechanism of the nanowires was also proposed. This method is an efficient way for producing Ge 3N 4 nanowires and could also be employed to fabricate other nanowires.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
