Abstract
Characterization and control methods of native oxide growth on silicon (Si) surfaces at room temperature and during temperature ramp-up are described. The X-ray photoelectron spectroscopy (XPS) data have sufficient resolution to discern the stepwise increase in the amount of native oxide on hydrofluoric acid (HF)-cleaned Si surfaces exposed to air at room temperature. The native oxide growth on HF-cleaned Si surfaces can be controlled by lowering oxygen or water concentration in the ambient of the process at room temperature and by passivating the Si surface for semiconductor processes at temperatures higher than 300° C. In situ control methods of native oxide growth result in low-resistance tungsten (W)/n+-Si contacts and very thin oxide films with high electrical insulating performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
