Abstract
Nanocrystalline Silicon (nc-Si) films were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 {degree sign}C) for use as an active layer in bottom-gate thin-film transistors (TFTs). Hydrogen dilution technique was attempted to increase the crystalline volume fraction (Xc). The hydrogen dilution ratio, RH=[H2]/[SiH4], was varied from 2 to 74. Xc of the nc-Si films was estimated by Raman spectrum. The incubation-layer thickness was estimated by transmission electron spectroscopy (TEM). Incubation layer was limited up to 5.26 nm and crystallinity was 71 %.
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