Abstract
In this paper, we presented Hall magnetic sensors based on nano-polysilcon thin film transistors(TFTs). These sensors are fabricated on the <100> orientation high resistivity silicon substratesby using complementary metal oxide semiconductor (CMOS) technology and adopting thenano-polysilicon thin films with thickness of 82 nm as the channel layers of TFTs. The influence ofthe channel layer doping type and channel length-width radio of TFT on sensor's sensitivity was investigated.When the supply voltage is 5.0 V, the maximum measured sensitivity of p-type channel andn-type channel sensors are about 8.5 mV/T and 25.6 mV/T, respectively. These experimental resultsmean that nano-polysilicon thin films present an application on Hall magnetic sensors.
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