Abstract
In order to improve the output sensitivity of the piezoelectric acceleration sensor, this paper proposed a high sensitivity acceleration sensor based on a piezoelectric metal oxide semiconductor field effect transistor (MOSFET). It is constituted by a piezoelectric beam and an N-channel depletion MOSFET. A silicon cantilever beam with Pt/ZnO/Pt/Ti multilayer structure is used as a piezoelectric beam. Based on the piezoelectric effect, the piezoelectric beam generates charges when it is subjected to acceleration. Due to the large input impedance of the MOSFET, the charge generated by the piezoelectric beam can be used as a gate control signal to achieve the purpose of converting the output charge of the piezoelectric beam into current. The test results show that when the external excitation acceleration increases from 0.2 g to 1.5 g with an increment of 0.1 g, the peak-to-peak value of the output voltage of the proposed sensors increases from 0.327 V to 2.774 V at a frequency of 1075 Hz. The voltage sensitivity of the piezoelectric beam is 0.85 V/g and that of the proposed acceleration sensor was 2.05 V/g, which is 2.41 times higher than the piezoelectric beam. The proposed sensor can effectively improve the voltage output sensitivity and can be used in the field of structural health monitoring.
Highlights
Micro-electro-mechanical system (MEMS) acceleration sensors, with the advantages of low cost, low power consumption, high compatibility with integrated circuit (IC) process and high integration [1,2,3,4], have a wide range of applications in automotive electronics, structural health monitoring, navigation and other fields [5,6,7,8]
PMAS with hightosensitivity the output sensitivity and reduce the output impedance of piezoelectric acceleration sensors, we be used in acceleration monitoring under special frequency vibration environments, such as health designed a piezoelectric metal oxide semiconductor field effect transistor (MOSFET) acceleration sensor (PMAS) structure
Is ignored; (4) it isdepletion assumed that there is no relative sliding between each thin films; (5) the cantilever beam is in an open environment and Working principle of piezoelectric (a) without external acceleration; (b)
Summary
Micro-electro-mechanical system (MEMS) acceleration sensors, with the advantages of low cost, low power consumption, high compatibility with integrated circuit (IC) process and high integration [1,2,3,4], have a wide range of applications in automotive electronics, structural health monitoring, navigation and other fields [5,6,7,8]. Sensors 2020, 20, 4988 of applying frequency; at the same time, they are limited by high output impedance, weak output signal and so on [20,21,22,23]. The researchers committed to improving the structure of the piezoelectric acceleration so as to improve its performance, especially its sensitivity. Jin Xie et al present a have advantages of low power cost and high range of applying frequency; at the same time, they are MEMS piezoelectric in-plane resonant accelerometer with a two-stage microleverage mechanism. Jin Xie et al present a MEMS reported novel singleand tri-axisaccelerometer piezoelectric-bimorph accelerometers that are built on The parylene piezoelectric in-plane resonant with a two-stage microleverage mechanism. A quad-beam bimorph structure with proof the doped piezoelectric materials inhighly order symmetric to improve the piezoelectric properties so aassingle to improve mass is used for tri-axis acceleration sensing. Ramany et al.sensitivity presented of a 3.528 nano-electro-mechanical accelerometer using zinc undoped oxide with output of 2.30%,
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