Abstract
The tungsten nanocrystals (W-NCs) memories fabricated by W/Si dual-sputtering and O 2 and N 2O annealing process were investigated. Significant W-NCs dots were formed by N 2O annealing and proved by the energy dispersive X-ray spectrometer (EDX) analysis. Superior electrical properties of W-NCs memories were optimized for 20/30 W/Si dual-sputtered ratio, 10–15 nm blocking oxide thickness and N 2O annealing at 950 °C. A pronounced capacitance–voltage hysteresis was observed with a memory window of 6.5 V under +9/−9 V sweeping.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
