Abstract

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. This paper investigates the resistance change characteristics with applied voltage bias on Ag/Ge–Se and Ag/As–Se chlacogenide thin film structure and describes the electrical characteristics of PMC-RAM made from these materials following annealing at 150 °C. As a result, it was obtained that R reverse/R forward ratio which represent by reversible resistance change was about 106, which ratio value can be get a high sensing margin when PMC-RAM detect the data. PMC-RAM technology promises to be non-volatile, low current and potentially, low cost for the next generation of nonvolatile memory application such as RFID chip to replace EEPROM.

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