Abstract
W- and Ti-doped thin films were deposited onto sapphire by the sol-gel method. Both films were grown with (020)-preferred direction. Doping of W had a great effect on the transition behaviors. A 1.2 atom % W-doped film showed a largely reduced resistance in the insulator state and decreased the transition temperature to . However, Ti-doped film had a little change of the transition temperature, and it was , even for the 20 atom % Ti doping. The resistance in the metal state was very large, which means a markedly small change of the resistance at the transition temperature. Further study is required for understanding the effects of doping film with metal ions.
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