Abstract
A novel device structure with a vertical double-gate and dual-strained channel is presented. The electrical characteristics of this device with a gate length of 100 nm are simulated. With a Ge content of 20%, the drain currents of the strained-Si NMOSFET and the strained-SiGe PMOSFET compared to the universal SOI MOSFETs are enhanced by 26% and 33%, respectively; the risetime and the falltime of the strained-channel CMOS are greatly decreased by 50% and 25.47% compared to their traditional Si channel counterparts. The simulation results show that the vertical double-gate (DG) dual-strained-channel MOSFETs exhibit better drive capability, a higher transconductance, and a faster circuit speed for CMOS compared to conventional-Si MOSFETs. The new structure can be achieved by today's semiconductor manufacturing level.
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