Abstract
Vanadium dioxide films were deposited using reactive RF-magnetron sputter deposition technique and characterized without or with post-annealing process for the application of thermal sensors. The film thickness variation on a 4-in wafer was less than ±2%. As-deposited film showing an abrupt metal–insulator transition (MIT) could be obtained with O 2 fraction of 6%. The films deposited at 400 and 450 °C showed abrupt changes of resistance in the order of 10 3 near typical MIT temperature of VO 2 without post-annealing. The 110-nm-thick VO 2 film deposited at 450 °C on c-sapphire revealed the resistance change of 1.2×10 4 near 68 °C after annealing at 510 °C.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
