Abstract
Characteristics of charge traps in AgIn5S8 single crystals are investigated by the use of Thermally Stimulated Current (TSC) technique. The TSC spectra of the unintentionally doped sample recorded at a constant heating rate from 80K to 300K reveals a single broad peak at ∼90K. The shift of the TSC peak continuously due to post-illumination preheating process confirmed the continuous trap distribution, which is Gaussian in shape. The trap density distribution changes from ∼40meV on the shallow side to ∼120meV on the deep side with the appearance of a maximum at ∼72meV.
Published Version
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