Abstract
A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd2O3) thin films. This is the first report on the use of Gd2O3 films as the gate insulator for a metal-oxide-based TFT. The properties of ZnO and Gd2O3 films deposited by pulsed laser deposition (PLD) at room temperature have also been studied under different oxygen pressures. In the high-oxygen-pressure region, the resistivity of the ZnO films was predominated by carrier concentration, while it is controlled by carrier mobility in the low-oxygen-pressure region. The on/off current ratio, field-effect mobility, and subthreshold swing of gate voltage obtained were approximately 105, 1.12 cm2 V-1 s-1, and 0.4 V/decade, respectively.
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