Abstract
In this article, TixSi1-xO (TSO) thin film varistors were fabricated by plasma enhanced atomic layer deposition (PEALD) in order to lower the varistor voltage. The Ti content in TSO film was controlled by adjusting the cycle ratio of TiO2 and SiO2. In the measurement of current-voltage (I-V) characteristics, the nonlinear behavior was obtained. Asymmetric curves with both polarities were observed, which indicates that conduction is affected by the electrode. The nonlinear coefficient increases with the decrease of the Ti content and operating voltage is below 10 V in all samples. Relatively high nonlinear coefficient, 13.6, was obtained. Energy barriers between electrode and TSO film may dominate the carrier conduction of TSO varistor film.
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