Abstract
We prepared TiN films by metallic or nitride mode sputtering using a collimator, and investigated the characteristics of the films. Resistivity, density, thermal stress, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) measurements and transmission electron microscope (TEM) observation were carried out. The characteristics of the TiN films depended on the N2/Ar flow ratio. TiN deposition rates in the metallic mode with N2/Ar flow ratios from 0.2 to 0.5 were 3 times higher than those in the conventional nitride mode with N2/Ar ratios from 0.75 to 1.0. By depositing the film under the best metallic mode conditions with N2/Ar=0.5, the TiN film with a minimum resistivity and a maximum film density was formed. The TiN films, which were prepared under optimized conditions of metallic mode deposition, had a small concentration of oxide in the TiN, strong (111)-preferred orientation and good crystallinity.
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