Characteristics of Ti -Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl

Abstract

films were deposited by a remote plasma atomic layer deposition (RPALD) method using cyclopentadienylcobalt dicarbonyl as the precursor with plasma. The impurity contents in the films were minimized under the optimized process conditions with plasma using a process pressure range between 0.1 and and a plasma power of . The ALD process window of the films showed a saturated temperature range between 125 and . The carbon and oxygen contents of as-deposited films were about 8 and 1 atom %, respectively. However, the carbon content in the films decreased from 8 to 4 atom % after in situ annealing at . For in situ annealed films deposited on substrates, a polycrystalline phase was observed. The surface and interface morphologies of were rough compared to -capped after ex situ annealing at . In addition, was completely transformed to at . However, in the in situ annealed films with -capped layer, the diffraction peak of began to appear at . The formation temperature of the -capped phase was retarded by about compared to the film without the -capped layer. In addition, the surface and interface morphologies of the -capped layer were smooth.