Abstract
Epitaxial Ti 0.97Co 0.03O 2:Sb 0.01(TCO:Sb) films were deposited on R-Al 2O 3 (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10 −6 Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10 22/cm 3 at 300 K. On the other hand, films deposited at 4×10 −4 Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10 21/cm 3. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.
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