Abstract
Thin films of oriented, polycrystalline p-type Zn 0 . 9 Mg 0 . 1 O were deposited on n-type indium-tin oxide (ITO)-coated glass substrates by pulsed laser deposition at 400°C to form transparent wide bandgap heterojunctions. The characteristics of Au, Ni, or Pt contacts subsequently deposited on these heterojunction layers were examined. In each case, rectifying behavior of the p-n junction was obtained. The junctions display a negative temperature coefficient for reverse breakdown voltage. This approach looks promising as a means of realizing low-cost-substrate transparent electronics.
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