Abstract
The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p+-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p+-n structures in the range 0.2–0.6mm a substantial change in the concentration of the radiation defects formed in this way is observed, having a maximum at 0.25 mm. Below 0.2 mm and above 0.6 mm the concentration of radiation defects exhibits a weak dependence on base thickness. The observed effect is explained by variation of the relative concentrations of vacancies and interstitial silicon atoms in the base during formation of p+-n pairs.
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