Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

Abstract

In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphological characteristics and atomic composition of the surface layers of heterostructures. As determined by X-ray diffraction, microscopic, and X-ray photoelectron methods, the heterostructure grown on Si(111) n-type monocrystalline silicon wafer with nanoporous por-Si buffer layer has a more homogeneous epitaxial layer, and the surface morphology of the layer is also more homogeneous.