Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge.

Yichao Yan,Wanli Zhang,Jie Xiong,Xianyao Cai,Hongchuan Jiang,Xinwu Deng,Wei Shi

doi:10.1186/s11671-015-0934-z

Abstract

The energetic igniters through integrating B/Ti nano-multilayers on tantalum nitride (TaN) ignition bridge are designed and fabricated. The X-ray diffraction (XRD) and temperature coefficient of resistance (TCR) results show that nitrogen content has a great influence on the crystalline structure and TCR. TaN films under nitrogen ratio of 0.99 % exhibit a near-zero TCR value of approximately 10 ppm/°C. The scanning electron microscopy demonstrates that the layered structure of the B/Ti multilayer films is clearly visible with sharp and smooth interfaces. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45 V reveal an excellent explosion performance by (B/Ti)n/TaN integration film bridge with small ignition delay time, high explosion temperature, much more bright flash of light, and much large quantities of the ejected product particles than TaN film bridge.

Highlights

With the increasing demand for small ignition devices, the investigation of heavily semiconductor or metallic film bridge, especially doped polycrystalline silicon, titanium, platinum, and chromium bridge, has attracted much attention in recent years [1,2,3,4,5,6,7]
Film ignition bridge devices, which are over 30 times smaller in volume, can function in a few tens of microseconds and operate at one-tenth the input energy compared with the hot-wire devices while improving no-fire conditions and electrostatic safety
The temperature coefficient of resistance (TCR) of the film is adjusted by changing the sputtering parameters, which makes it ideally suitable for the application across a large temperature range compared with traditional metallic film bridge devices

Summary

Introduction

With the increasing demand for small ignition devices, the investigation of heavily semiconductor or metallic film bridge, especially doped polycrystalline silicon, titanium, platinum, and chromium bridge, has attracted much attention in recent years [1,2,3,4,5,6,7]. In the discharge mechanism of film ignition bridge, thermal plasma is generated to ignite explosive powder by passing current through the bridge which in turn changes the physical features of the bridge. A small thermal pulse or an electrical stimulus along the films causes atoms to Tantalum nitride (TaN) can be a promising candidate for high-precision thin-film resistor and its excellent physical properties including quite high values of sheet resistance [17]. The temperature coefficient of resistance (TCR) of the film is adjusted by changing the sputtering parameters, which makes it ideally suitable for the application across a large temperature range compared with traditional metallic film bridge devices

Objectives

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Results

Conclusion